Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
Identifieur interne : 002786 ( Main/Repository ); précédent : 002785; suivant : 002787Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
Auteurs : RBID : Pascal:12-0008944Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature. The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off wavelength (λc) of 4.5μm, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for λc = 5.5μm at 80K. Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K]. Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance in the MWIR domain.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 002502
Links to Exploration step
Pascal:12-0008944Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode</title><author><name sortKey="Cervera, C" uniqKey="Cervera C">C. Cervera</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2 Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Taalat, R" uniqKey="Taalat R">R. Taalat</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2 Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Christol, P" uniqKey="Christol P">P. Christol</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2 Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Rodriguez, J B" uniqKey="Rodriguez J">J. B. Rodriguez</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2 Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Jaworowicz, K" uniqKey="Jaworowicz K">K. Jaworowicz</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ONERA, Chemin de la Huniere</s1><s2>91761 Palaiseau</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Ribet Mohamed, I" uniqKey="Ribet Mohamed I">I. Ribet-Mohamed</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ONERA, Chemin de la Huniere</s1><s2>91761 Palaiseau</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Palaiseau</settlement></placeName></affiliation></author><author><name sortKey="Konczewicz, L" uniqKey="Konczewicz L">L. Konczewicz</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Laboratoire Charles Coulomb, UMR-CNRS 5221 - Université Montpellier 2</s1><s2>34 095 Montpellier</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>34 095 Montpellier</wicri:noRegion><wicri:noRegion>UMR-CNRS 5221 - Université Montpellier 2</wicri:noRegion><wicri:noRegion>34 095 Montpellier</wicri:noRegion><orgName type="university">Université Montpellier 2</orgName><placeName><settlement type="city">Montpellier</settlement><region type="region" nuts="2">Languedoc-Roussillon</region></placeName></affiliation></author><author><name sortKey="Contreras, S" uniqKey="Contreras S">S. Contreras</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Laboratoire Charles Coulomb, UMR-CNRS 5221 - Université Montpellier 2</s1><s2>34 095 Montpellier</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>34 095 Montpellier</wicri:noRegion><wicri:noRegion>UMR-CNRS 5221 - Université Montpellier 2</wicri:noRegion><wicri:noRegion>34 095 Montpellier</wicri:noRegion><orgName type="university">Université Montpellier 2</orgName><placeName><settlement type="city">Montpellier</settlement><region type="region" nuts="2">Languedoc-Roussillon</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0008944</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0008944 INIST</idno><idno type="RBID">Pascal:12-0008944</idno><idno type="wicri:Area/Main/Corpus">002502</idno><idno type="wicri:Area/Main/Repository">002786</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Ambient temperature</term><term>Binary compounds</term><term>Indium Arsenides</term><term>Infrared radiation</term><term>Molecular beam epitaxy</term><term>Monolayers</term><term>Performance evaluation</term><term>Photodiodes</term><term>Photoluminescence</term><term>Superlattices</term><term>Temperature dependence</term><term>Voltage measurement</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Photodiode</term><term>Epitaxie jet moléculaire</term><term>Rayonnement IR</term><term>Dépendance température</term><term>Température ambiante</term><term>Spectre absorption</term><term>Superréseau</term><term>Couche monomoléculaire</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Evaluation performance</term><term>Mesure tension électrique</term><term>InAs</term><term>As In</term><term>0130C</term><term>0757</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature. The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off wavelength (λc) of 4.5μm, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for λc = 5.5μm at 80K. Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K]. Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance in the MWIR domain.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>8012</s2></fA05><fA06><s3>p. 2</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Infrared technology and applications XXXVII : 25-29 April 2011, Orlando, Florida, United States</s1></fA09><fA11 i1="01" i2="1"><s1>CERVERA (C.)</s1></fA11><fA11 i1="02" i2="1"><s1>TAALAT (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHRISTOL (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>RODRIGUEZ (J. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>JAWOROWICZ (K.)</s1></fA11><fA11 i1="06" i2="1"><s1>RIBET-MOHAMED (I.)</s1></fA11><fA11 i1="07" i2="1"><s1>KONCZEWICZ (L.)</s1></fA11><fA11 i1="08" i2="1"><s1>CONTRERAS (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>ANDRESEN (Björn F.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>FULOP (Gabor F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>NORTON (Paul R.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institut d'Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2 Place Eugene Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>ONERA, Chemin de la Huniere</s1><s2>91761 Palaiseau</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratoire Charles Coulomb, UMR-CNRS 5221 - Université Montpellier 2</s1><s2>34 095 Montpellier</s2><s3>FRA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>801213.1-801213.10</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-8586-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174753520370</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0008944</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Symmetric and asymmetric mid-wavelength infrared (MWIR) InAs/GaSb superlattice (SL) pin photodiode were fabricated by Molecular Beam Epitaxy (MBE) on p-type GaSb substrate and characterized as a function of temperature. The symmetric SL structure was made of 8 InAs monolayers (MLs) and 8 GaSb MLs and exhibits at 80K a cut-off wavelength (λc) of 4.5μm, while the asymmetric SL design was composed of 7.5 InAs MLs and 3.5 GaSb MLs for λc = 5.5μm at 80K. Optical characterizations made of photoluminescence as a function of temperature and room temperature absorption spectra were performed on these two kinds of structures. Several electrical characterizations including dark current and capacitance-voltage measurements were also carried out on single detectors in the temperature range [77K-300K]. Results obtained were compared and analyzed in order to define optimized SL structure design for the high performance in the MWIR domain.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B00G57</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photodiode</s0><s5>11</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photodiodes</s0><s5>11</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>30</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>30</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Rayonnement IR</s0><s5>37</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Infrared radiation</s0><s5>37</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Dépendance température</s0><s5>41</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>41</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Température ambiante</s0><s5>42</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>43</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>43</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Superréseau</s0><s5>47</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Superlattices</s0><s5>47</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche monomoléculaire</s0><s5>48</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Monolayers</s0><s5>48</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Evaluation performance</s0><s5>61</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Performance evaluation</s0><s5>61</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Mesure tension électrique</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Voltage measurement</s0><s5>62</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>0757</s0><s4>INC</s4><s5>84</s5></fC03><fN21><s1>002</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Infrared technology and applications. Conference</s1><s2>37</s2><s3>Orlando FL USA</s3><s4>2011</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002786 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 002786 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:12-0008944
|texte= Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
}}
| This area was generated with Dilib version V0.5.77. |  |